FDMC5614P Fairchild Semiconductor, FDMC5614P Datasheet - Page 5

• Manufacturer Part Number: FDMC5614P
• Description: MOSFET P-CH 60V 5.7A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC5614P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 1055pF @ 30V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.084 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13.5 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC5614PTR

FDMC5614P Rev.C1
Typical Characteristics
0.0005
1E-3
0.01
0.1
1
2
10
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
10
-3
SINGLE PULSE
R
θ
JA
T
= 135
Figure 12. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
o
C/W
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
5
10
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
1
DM
x Z
P
θJA
DM
1
/t
x R
2
θJA
10
t
1
2
+ T
t
2
A
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10
3