IPB100N06S3L-03 Infineon Technologies, IPB100N06S3L-03 Datasheet - Page 3
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IPB100N06S3L-03
Manufacturer Part Number
IPB100N06S3L-03
Description
MOSFET N-CH 55V 100A TO263-3-2
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB100N06S3L-03.pdf
(9 pages)
Specifications of IPB100N06S3L-03
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.2V @ 230µA
Gate Charge (qg) @ Vgs
550nC @ 10V
Input Capacitance (ciss) @ Vds
26240pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
77 ns
Minimum Operating Temperature
- 55 C
Rise Time
70 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB100N06S3L-03INTR
IPB100N06S3L-03XTINTR
IPB100N06S3L-03XTINTR
IPB100N06S3L03XT
SP000087978
IPB100N06S3L-03XTINTR
IPB100N06S3L-03XTINTR
IPB100N06S3L03XT
SP000087978
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB100N06S3L-03
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.1
1)
information see Application Note ANPS071E
2)
3)
4)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an R
Defined by design. Not subject to production test.
Qualified at -5V and +16V.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
= 0.5 K/W the chip is able to carry 234 A at 25°C. For detailed
V
f =1 MHz
V
V
R
V
V
T
V
T
V
di
C
j
GS
DD
GS
DD
GS
GS
R
G
=25 °C
F
page 3
=25 °C
=27.5 V, I
/dt =100 A/µs
=1.3
=0 V, V
=27.5 V,
=10 V, I
=11 V, I
=0 to 10 V
=0 V, I
Conditions
F
2
DS
=80 A,
D
D
(one layer, 70 µm thick) copper area for drain
F
=80 A,
=80 A,
=25 V,
=I
IPI100N06S3L-03, IPP100N06S3L-03
S
,
min.
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
26240
3290
3140
typ.
110
368
140
205
3.5
0.9
39
70
77
99
68
-
-
IPB100N06S3L-03
max.
550
100
400
1.3
-
-
-
-
-
-
-
-
-
-
-
-
2007-11-07
Unit
pF
ns
nC
V
A
V
ns
nC