IPB100N06S3L-03 Infineon Technologies, IPB100N06S3L-03 Datasheet - Page 3

• Manufacturer Part Number: IPB100N06S3L-03
• Description: MOSFET N-CH 55V 100A TO263-3-2
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB100N06S3L-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 230µA
• Gate Charge (qg) @ Vgs: 550nC @ 10V
• Input Capacitance (ciss) @ Vds: 26240pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 77 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 70 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB100N06S3L-03INTR; IPB100N06S3L-03XTINTR; IPB100N06S3L-03XTINTR; IPB100N06S3L03XT; SP000087978

Rev. 1.1
1)
information see Application Note ANPS071E
2)
3)
4)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an R
Defined by design. Not subject to production test.
Qualified at -5V and +16V.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
= 0.5 K/W the chip is able to carry 234 A at 25°C. For detailed
V
f =1 MHz
V
V
R
V
V
T
V
T
V
di
C
j
GS
DD
GS
DD
GS
GS
R
G
=25 °C
F
page 3
=25 °C
=27.5 V, I
/dt =100 A/µs
=1.3
=0 V, V
=27.5 V,
=10 V, I
=11 V, I
=0 to 10 V
=0 V, I
Conditions
F
2
DS
=80 A,
D
D
(one layer, 70 µm thick) copper area for drain
F
=80 A,
=80 A,
=25 V,
=I
IPI100N06S3L-03, IPP100N06S3L-03
S
,
min.
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
26240
3290
3140
typ.
110
368
140
205
3.5
0.9
39
70
77
99
68
-
-
IPB100N06S3L-03
max.
550
100
400
1.3
-
-
-
-
-
-
-
-
-
-
-
-
2007-11-07
Unit
pF
ns
nC
V
A
V
ns
nC