IPB70N10S3-12 Infineon Technologies, IPB70N10S3-12 Datasheet - Page 9
![MOSFET N-CH 100V 70A TO263-3](/photos/5/52/55239/ipb100n06s3l-03_sml.jpg)
IPB70N10S3-12
Manufacturer Part Number
IPB70N10S3-12
Description
MOSFET N-CH 100V 70A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP70N10S3-12.pdf
(9 pages)
Specifications of IPB70N10S3-12
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11.3 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
4355pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0113 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB70N10S3-12
IPB70N10S3-12INTR
SP000261246
IPB70N10S3-12INTR
SP000261246
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB70N10S3-12
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPB70N10S3-12
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
Revision History
Version
Date
Changes
Rev. 1.0
page 9
2008-02-12