IPB04N03LA Infineon Technologies, IPB04N03LA Datasheet - Page 7
![MOSFET N-CH 25V 80A D2PAK](/photos/5/53/55328/ipb04n03la_sml.jpg)
IPB04N03LA
Manufacturer Part Number
IPB04N03LA
Description
MOSFET N-CH 25V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB04N03LA.pdf
(9 pages)
Specifications of IPB04N03LA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.9 mOhm @ 55A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 60µA
Gate Charge (qg) @ Vgs
32nC @ 5V
Input Capacitance (ciss) @ Vds
3877pF @ 15V
Power - Max
107W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IPB04N03LAINTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB04N03LA
Manufacturer:
INFINEON
Quantity:
12 500
Company:
Part Number:
IPB04N03LA G
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.7
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
29
28
27
26
25
24
23
22
21
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
150 °C
10
20
t
T
AV
j
60
[°C]
[µs]
100 °C
100
100
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=40 A pulsed
g s
10
20
Q
Q
gate
g
Q
sw
[nC]
Q
30
g d
IPB04N03LA G
5 V
40
20 V
15 V
Q
g ate
2006-05-10
50