SPB17N80C3 Infineon Technologies, SPB17N80C3 Datasheet
SPB17N80C3
Specifications of SPB17N80C3
SPB17N80C3INTR
SPB17N80C3T
SPB17N80C3XT
SPB17N80C3XTINTR
SPB17N80C3XTINTR
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SPB17N80C3 Summary of contents
Page 1
... Gate source voltage AC (f >1Hz) Power dissipation 25°C C Operating and storage temperature Final data in TO 220 P-TO220-3-31 P-TO220-3-31 Ordering Code Q67040-S4353 Q67040-S4354 jmax 2) limited jmax limited jmax Page 1 SPP17N80C3, SPB17N80C3 SPA17N80C3 DS(on P-TO263-3-2 P-TO220-3 Marking 17N80C3 17N80C3 17N80C3 Symbol Value SPP_B SPA I ...
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... Electrical Characteristics =25°C unless otherwise specified Parameter Drain-source breakdown voltage V Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance R Gate input resistance SPP17N80C3, SPB17N80C3 Final data Symbol dv/dt Symbol R thJC R thJC_FP R thJA ...
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... V d(on =17A =4 =125° d(off =640V, I =17A =640V, I =17A 10V =640V, I =17A V D (plateau) DD Page 3 SPP17N80C3, SPB17N80C3 SPA17N80C3 Values min. typ. max 2320 - 1250 - 124 - 25 =0/10V 177 - while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V ...
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... Unit Symbol SPA 0.00812 K/W C th1 0.016 C th2 0.031 C th3 0.16 C th4 0.324 C th5 2.522 C th6 th1 th th1 th2 th,n Page 4 SPP17N80C3, SPB17N80C3 SPA17N80C3 Values min. typ 550 = 1200 Value SPP_B SPA 0.0003562 0.0003562 0.001337 0.001337 0.001831 0.001831 0.005033 0.005033 ...
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... Safe operating area parameter : =25° 0.001 0. 0 Final data 2 Power dissipation FullPAK = tot 100 120 °C 160 Safe operating area FullPAK parameter Page 5 SPP17N80C3, SPB17N80C3 SPA17N80C3 ) 100 120 ) DS = 25° 0.001 0. 0 2003-07-03 160 ° ...
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... DS j parameter µ Final data 6 Transient thermal impedance FullPAK Z thJC parameter 0.01 single pulse Typ. output characteristic parameter 20V A 10V Page 6 SPP17N80C3, SPB17N80C3 SPA17N80C3 = 0.01 -3 single pulse - =150° µ 20V 10V 2003-07- 6.5V 6V 5. ...
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... Final data 10 Drain-source on-state resistance R DS(on) parameter : 10V 20V Typ. gate charge V DS(on)max GS parameter: I 25°C 150° Page 7 SPP17N80C3, SPB17N80C3 SPA17N80C3 = SPP17N80C3 1.6 1.2 1 0.8 0.6 0.4 98% typ 0.2 0 -60 - 100 = Gate = 17 A pulsed D SPP17N80C3 0 max 0 100 °C 180 ...
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... Final data 14 Avalanche SOA par 2 Drain-source breakdown voltage V (BR)DSS 980 940 920 900 880 860 840 820 800 780 760 740 720 100 °C 150 T j Page 8 SPP17N80C3, SPB17N80C3 SPA17N80C3 ) AR 150 ° =125° (START SPP17N80C3 V -60 - 100 =25°C ...
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... Typ. C stored energy oss E =f(V ) oss DS 18 µ 100 200 300 400 Final data 18 Typ. capacitances parameter 500 600 V 800 V DS Page 9 SPP17N80C3, SPB17N80C3 SPA17N80C3 ) DS =0V, f=1 MHz iss oss 1 C rss 0 0 100 200 300 400 500 600 2003-07-03 800 ...
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... Definition of diodes switching characteristics SPP17N80C3, SPB17N80C3 Final data Page 10 SPA17N80C3 2003-07-03 ...
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... P-TO-220-3-1 10 ±0.4 A 3.7 ±0 0.75 ±0.1 1.17 ±0.22 2x 2.54 0.25 M All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 2 P-TO-263-3-2 (D -PAK) SPP17N80C3, SPB17N80C3 Final data B 4.44 1.27 ±0.13 0.05 0.5 ±0.1 2.51 ±0 Page 11 SPA17N80C3 2003-07-03 ...
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... P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01) SPP17N80C3, SPB17N80C3 Final data Page 12 SPA17N80C3 2003-07-03 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SPP17N80C3, SPB17N80C3 Final data Page 13 SPA17N80C3 ...