BSC190N15NS3 G Infineon Technologies, BSC190N15NS3 G Datasheet - Page 3
![MOSFET N-CH 150V 50A TDSON-8](/photos/29/5/290580/tdson8_sml.jpg)
BSC190N15NS3 G
Manufacturer Part Number
BSC190N15NS3 G
Description
MOSFET N-CH 150V 50A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSC190N15NS3_G.pdf
(9 pages)
Specifications of BSC190N15NS3 G
Package / Case
8-PowerTDFN
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 90µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
2420pF @ 75V
Power - Max
125W
Mounting Type
Surface Mount
Gate Charge Qg
23 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
19 mOhms
Forward Transconductance Gfs (max / Min)
57 S, 29 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
50 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSC190N15NS3 G
BSC190N15NS3 GTR
SP000416636
BSC190N15NS3 GTR
SP000416636