FDB150N10 Fairchild Semiconductor, FDB150N10 Datasheet - Page 2

• Manufacturer Part Number: FDB150N10
• Description: MOSFET N-CH 100V 57A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB150N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 49A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 4760pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 57 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB150N10TR

FDB150N10 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.11mH, I
3: I
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
BV
∆BV
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
∆T
FS
GS(th)
DS(on)
iss
oss
rss
SD
g(tot)
gs
gd
rr
SD
Device Marking
Symbol
DSS
J
DSS
FDB150N10
≤ 49A, di/dt ≤ 200A/µs, V
AS
= 49A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDB150N10
G
DSS
Device
= 25Ω, Starting T
Parameter
, Starting T
J
= 25°C
J
= 25°C
Package
D2-PAK
I
I
V
V
V
V
V
V
V
V
V
V
V
V
dI
V
f = 1MHz
D
D
DS
DS
GS
DD
GS
DS
GS
GS
GS
GS
GS
DS
DS
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 100V, V
= 100V, V
= ±20V, V
= 0V, I
= 20V, I
= 25V, V
= 50V, I
= 10V, R
= 80V, I
= 10V
= 0V, I
= V
= 10V, I
DS
T
Test Conditions
, I
C
2
SD
SD
D
D
Reel Size
D
D
= 25
D
GS
GS
GEN
330mm
= 49A
= 49A
= 49A
= 49A
GS
GS
= 49A
= 49A
DS
= 250µA
= 0V
= 0V, T
o
= 0V
= 0V, T
= 0V
C unless otherwise noted
= 25Ω
C
C
= 25
= 150
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
o
(Note 4)
C
C
o
Tape Width
C
24mm
Min.
100
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3580
Typ.
164
340
140
156
0.1
47
86
83
53
19
15
41
70
12
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
4760
500
450
210
104
338
182
176
228
1.3
4.5
69
57
15
800
1
-
-
-
-
-
-
-
Units
V/
mΩ
pF
pF
pF
nC
nC
nC
µA
nA
ns
ns
ns
ns
ns
nC
V
V
S
A
A
V
o
C