FDB035AN06A0 Fairchild Semiconductor, FDB035AN06A0 Datasheet - Page 4

• Manufacturer Part Number: FDB035AN06A0
• Description: MOSFET N-CH 60V 80A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB035AN06A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Input Capacitance (ciss) @ Vds: 6400pF @ 25V
• Power - Max: 310W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB035AN06A0; FDB035AN06A0TR

©2010 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Figure 5. Forward Bias Safe Operating Area
1000
2000
5
4
3
160
120
100
80
40
0.1
10
0
1
3.0
0
1
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
Figure 7. Transfer Characteristics
OPERATION IN THIS
T
T
SINGLE PULSE
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
LIMITED BY r
J
C
DD
= MAX RATED
= 25
AREA MAY BE
= 15V
3.5
o
C
T
V
V
J
DS
GS
20
= 25
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
o
C
I
4.0
D
T
, DRAIN CURRENT (A)
J
Current
= 175
o
10
40
C
4.5
V
V
GS
GS
T
J
= 6V
= -55
= 10V
T
C
5.0
= 25°C unless otherwise noted
o
C
60
100 s
10 s
1ms
DC
5.5
10ms
100
80
6
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
160
120
Figure 10. Normalized Drain to Source On
100
80
40
Figure 6. Unclamped Inductive Switching
2.5
2.0
1.5
1.0
0.5
0
10
1
0.01
-80
0
Resistance vs Junction Temperature
Figure 8. Saturation Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
If R = 0
t
If R
t
AV
AV
STARTING T
= (L)(I
= (L/R)ln[(I
V
-40
GS
0
= 20V
V
AS
DS
T
0.1
J
t
)/(1.3*RATED BV
, DRAIN TO SOURCE VOLTAGE (V)
AV
, JUNCTION TEMPERATURE (
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
J
AS
, TIME IN AVALANCHE (ms)
0
= 150
0.5
Capability
*R)/(1.3*RATED BV
o
C
40
V
GS
1
STARTING T
= 6V
DSS
80
- V
V
DD
DSS
GS
1.0
V
)
GS
120
= 10V
- V
J
= 25
= 10V, I
10
DD
o
C)
) +1]
V
FDB035AN06A0 Rev. A2
o
GS
C
T
160
C
D
= 5V
= 25
=80A
o
C
100
200
1.5