SPW17N80C3 Infineon Technologies, SPW17N80C3 Datasheet - Page 8

• Manufacturer Part Number: SPW17N80C3
• Description: MOSFET N-CH 800V 17A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW17N80C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013369; SPW17N80C3IN; SPW17N80C3X; SPW17N80C3XK; SPW17N80C3XTIN; SPW17N80C3XTIN

13 Drain-source breakdown voltage
V
15 Typ. capacitances
C = f ( V
parameter: V
Rev. 2.1
(BR)DSS
pF
10
10
10
10
10
10
980
940
920
900
880
860
840
820
800
780
760
740
720
V
-60
5
4
3
2
1
0
0
SPW17N80C3
DS
= f ( T
)
100
-20
C
GS
rss
200
j
)
=0V, f=1 MHz
20
300
400
60
C
C
500
iss
oss
100
600
°C
V
T
V
j
DS
180
800
Page 8
14 Avalanche power losses
P
parameter: E
16 Typ. C
E
AR
oss
µJ
W
500
400
350
300
250
200
150
100
= f ( V
= f ( f )
50
18
14
12
10
0
8
6
4
2
0
10
0
4
DS
oss
100
)
AR
stored energy
200
=0.5mJ
300
400
10
5
SPW17N80C3
500
2005-02-10
600
Hz
V
f
V
DS
800
10
6