FQP17P06 Fairchild Semiconductor, FQP17P06 Datasheet - Page 4
![MOSFET P-CH 60V 17A TO-220](/photos/5/54/55406/mfg_to220_desc_sml.jpg)
FQP17P06
Manufacturer Part Number
FQP17P06
Description
MOSFET P-CH 60V 17A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP17P06.pdf
(8 pages)
Specifications of FQP17P06
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
79W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
9.3 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
17 A
Power Dissipation
79000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQP17P06
Manufacturer:
MICRON
Quantity:
1 160
Company:
Part Number:
FQP17P06
Manufacturer:
ST
Quantity:
12 000
Company:
Part Number:
FQP17P06
Manufacturer:
FSC
Quantity:
2 000
Company:
Part Number:
FQP17P06
Manufacturer:
FSC
Quantity:
20 000
Part Number:
FQP17P06
Manufacturer:
FSC/ON可看货
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
※ Notes :
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 175
= 25
- 5
D = 0 .5
o
0 .0 5
0 .0 2
0 .0 1
C
o
0 .2
10
0 .1
50
C
DS(on)
1
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
- 4
C]
s i n g l e p u ls e
1 ms
※ Notes :
1. V
2. I
t
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
100 s
= -250 μ A
150
= 0 V
1 0
- 3
200
10
2
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
18
15
12
-100
9
6
3
0
25
※ N o te s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
θ
J M
-50
DM
50
J C
- T
( t) = 1 .9 ℃ /W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
D M
C
75
0
t
1 0
, Case Temperature [ ℃ ]
2
* Z
0
1
θ J C
/t
2
( t)
100
50
1 0
1
100
125
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= -8.5 A
= -10 V
Rev. A2. May 2001
200
175