FQPF6N80C Fairchild Semiconductor, FQPF6N80C Datasheet
FQPF6N80C
Specifications of FQPF6N80C
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FQPF6N80C Summary of contents
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... S FQP6N80C FQPF6N80C Units 800 V 5.5 5 3.2 3 680 mJ 5.5 A 15.8 mJ 4.5 V/ns 158 51 W 1.27 0.41 W/°C -55 to +150 °C 300 °C FQP6N80C FQPF6N80C Units 0.79 2.45 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, June 2003 TM ...
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... Repetitive Rating : Pulse width limited by maximum junction temperature 42mH 5.5A 50V 5.5A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 800 640 125° ...
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... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1500 1200 C iss 900 C oss 600 300 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ Figure 2. Transfer Characteristics 10V 20V GS ※ ...
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... J 3. Single Pulse - Figure 9-2. Maximum Safe Operating Area 100 125 150 ※ Notes : 3 - 100 150 200 Junction Temperature [ Temperature Operation in This Area Limited by R DS(on) 100 100 ms DC Notes : 150 Single Pulse Drain-Source Voltage [V] DS for FQPF6N80C Rev. A, June 2003 ...
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... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FQP6N80C Figure 11-2. Transient Thermal Response Curve for FQPF6N80C ©2003 Fairchild Semiconductor Corporation (Continued) ※ ※ ℃ θ θ ℃ θ θ Rev. A, June 2003 ...
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... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...
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... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2003 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, June 2003 ...
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... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2003 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, June 2003 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...