FDPF16N50T Fairchild Semiconductor, FDPF16N50T Datasheet - Page 2

MOSFET N-CH 500V 16A TO-220F

FDPF16N50T

Manufacturer Part Number
FDPF16N50T
Description
MOSFET N-CH 500V 16A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF16N50T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1945pF @ 25V
Power - Max
38.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
38.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF16N50T
Manufacturer:
Fairchild Semiconductor
Quantity:
67 000
Part Number:
FDPF16N50T
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FDPF16N50T
Manufacturer:
FAIRCHILD
Quantity:
8 000
Company:
Part Number:
FDPF16N50T
Quantity:
4 000
FDP16N50 / FDPF16N50 Rev. B
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.5mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
ΔBV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
d(on)
d(off)
f
DSS
GSSF
GSSR
r
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
ΔT
≤ 16A, di/dt ≤ 200A/μs, V
FDPF16N50
DSS
FDP16N50
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 16A, V
DD
= 50V, R
DD
≤ BV
Parameter
FDPF16N50
FDP16N50
Device
G
DSS
= 25Ω, Starting T
, Starting T
J
= 25°C
T
J
C
= 25°C
= 25°C unless otherwise noted
Package
TO-220F
TO-220
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
G
DS
GS
GS
GS
F
= 250μA, Referenced to 25°C
/dt =100A/μs
= 25Ω
= 500V, V
= 400V, T
= V
= 40V, I
= 25V, V
= 400V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 250V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 250μA
= 16A
= 16A
DS
GS
D
D
DS
= 8A
C
= 8A
GS
= 250μA
= 16A
= 16A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
-
-
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
500
-
-
3.0
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Typ.
1495
0.31
235
150
490
0.5
8.5
5.0
23
20
40
65
80
32
14
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Quantity
Max Units
1945
-100
0.38
100
310
310
140
170
www.fairchildsemi.com
5.0
9.2
1.4
10
30
90
45
37
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1
50
50
V/°C
μA
μA
nA
nA
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
A
A
V

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