FDPF16N50 Fairchild Semiconductor, FDPF16N50 Datasheet - Page 3

MOSFET N-CH 500V 16A TO-220F

FDPF16N50

Manufacturer Part Number
FDPF16N50
Description
MOSFET N-CH 500V 16A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF16N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1945pF @ 25V
Power - Max
38.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
16A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
380mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.38 Ohms
Forward Transconductance Gfs (max / Min)
23 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
38.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FDP16N50 / FDPF16N50 Rev. B
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
4000
3000
2000
1000
0.6
0.5
0.4
0.3
0.2
10
10
10
10
-1
2
1
0
10
0
0
10
Drain Current and Gate Voltage
-1
-1
Top :
Bottom : 5.5 V
5
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
10
C
V
V
iss
DS
DS
C
, Drain-Source Voltage [V]
C
, Drain-Source Voltage [V]
I
rss
D
oss
15
10
, Drain Current [A]
10
0
0
V
GS
= 10V
20
25
C
C
C
iss
oss
rss
= C
= C
= C
V
GS
gs
gd
10
ds
30
* Note : T
+ C
10
+ C
= 20V
1
* Notes :
1. 250
2. T
1
gd
gd
(C
C
* Note :
ds
= 25
J
1. V
2. f = 1 MHz
μ
= 25
= shorted)
s Pulse Test
35
o
GS
C
o
C
= 0 V
40
3
10
10
10
10
12
10
1
0
1
0
0.2
8
6
4
2
0
2
0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.4
Variation vs. Source Current
0.6
25
150
4
o
C
o
25
C
150
0.8
10
o
V
V
C
o
GS
and Temperatue
SD
Q
C
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
G
1.0
, Total Gate Charge [nC]
V
V
V
DS
DS
6
DS
= 400V
= 250V
1.2
= 100V
1.4
20
-55
o
C
1.6
8
1.8
* Notes :
* Notes :
1. V
2. 250
* Note : I
30
1. V
2. 250
2.0
10
GS
DS
μ
= 0V
= 40V
μ
s Pulse Test
s Pulse Test
D
www.fairchildsemi.com
2.2
= 16A
2.4
12
40

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