FDPF18N50 Fairchild Semiconductor, FDPF18N50 Datasheet - Page 5

• Manufacturer Part Number: FDPF18N50
• Description: MOSFET N-CH 500V 18A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF18N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 265 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2860pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.265 Ohms
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 58 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP18N50 / FDPF18N50 Rev. B
Typical Performance Characteristics
Figure 11-1. Transient Thermal Response Curve - FDP18N50
Figure 11-2. Transient Thermal Response Curve - FDPF18N50
1 0
1 0
1 0
1 0
1 0
1 0
-1
-2
-1
-2
0
1 0
0
1 0
-5
-5
D = 0 .5
D = 0 .5
0 .0 5
0 .0 2
0 .0 1
0 .0 5
0 .0 2
0 .0 1
0 .1
0 .2
0 .1
0 .2
1 0
1 0
-4
-4
s in g le p u ls e
s in g le p u ls e
t
t
1
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
1 0
1 0
-3
-3
(Continued)
5
1 0
1 0
-2
-2
1 0
1 0
* N o te s :
* N o te s :
-1
-1
1 . Z
2 . D u ty F a c to r , D = t
3 . T
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
P
DM
θ
J M
θ
J M
DM
J C
J C
( t) = 0 .5 3
- T
( t) = 3 .3
- T
C
C
= P
= P
1 0
1 0
t
1
t
D M
D M
1
t
o
0
0
t
2
C /W M a x .
o
2
* Z
* Z
C /W M a x .
1
1
/t
θ
/t
θ
J C
J C
2
2
( t)
( t)
1 0
1 0
1
1
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