FDP15N40 Fairchild Semiconductor, FDP15N40 Datasheet

MOSFET N-CH 400V 15A TO-220

FDP15N40

Manufacturer Part Number
FDP15N40
Description
MOSFET N-CH 400V 15A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDP15N40

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1750pF @ 25V
Power - Max
170W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15 A
Power Dissipation
170000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
40 ns
Rise Time
55 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP15N40
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2008 Fairchild Semiconductor Corporation
FDP15N40 / FDPF15N40 Rev. A
*Drain current limited by maximum junction temperature
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP15N40 / FDPF15N40
N-Channel MOSFET
400V, 15A, 0.3Ω
Features
• R
• Low Gate Charge ( Typ. 28nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.24Ω ( Typ.)@ V
G
( Typ. 17pF)
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
S
GS
TO-220
FDP Series
= 10V, I
D
= 7.5A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
G
D
o
C)
S
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power
factor correction.
TO-220F
FDPF Series
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP15N40
FDP15N40
G
1.45
62.5
170
0.7
0.5
15
60
9
-55 to +150
400
±30
731
300
15
17
15
FDPF15N40
FDPF15N40
S
D
October 2008
UniFET
62.5
15*
60*
3.0
0.3
40
9*
-
www.fairchildsemi.com
switching
Units
W/
Units
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDP15N40 Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FDP15N40 / FDPF15N40 Rev. A Description = 7.5A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 15A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP15N40 / FDPF15N40 Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250μ ...

Page 3

... V = 10V GS 0.30 0.25 0. Drain Current [A] D Figure 5. Capacitance Characteristics 3000 C iss = oss = rss = C gd 2000 1000 0 0 Drain-Source Voltage [V] DS FDP15N40 / FDPF15N40 Rev. A Figure 2. Transfer Characteristics 60 10 *Notes: μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 20V GS o *Note 0.1 ...

Page 4

... J Figure 9. Maximum Safe Operating Area - FDP15N40 100 10 1 Operation in This Area is Limited by R DS(on) 0.1 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDP15N40 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.002 -5 10 FDP15N40 / FDPF15N40 Rev. A (Continued) Figure 8. On-Resistance Variation 3 ...

Page 5

... FDP15N40 / FDPF15N40 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP15N40 / FDPF15N40 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 9.90 (8.70) ø3.60 1.27 ±0.10 2.54TYP [2.54 ] ±0.20 10.00 FDP15N40 / FDPF15N40 Rev. A TO-220 ±0.20 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ] ±0.20 ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP15N40 / FDPF15N40 Rev. A TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 ±0.20 8 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP15N40 / FDPF15N40 Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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