FDA24N40F Fairchild Semiconductor, FDA24N40F Datasheet

MOSFET N-CH 400V 23A TO-3PN

FDA24N40F

Manufacturer Part Number
FDA24N40F
Description
MOSFET N-CH 400V 23A TO-3PN
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA24N40F

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3030pF @ 25V
Power - Max
235W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
23 A
Power Dissipation
235000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDA24N40F
Manufacturer:
IXYS
Quantity:
30 000
©2007 Fairchild Semiconductor Corporation
FDA24N40F Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDA24N40F
N-Channel MOSFET, FRFET
400V, 23A, 0.19Ω
Features
• R
• Low gate charge (Typ. 46nC)
• Low Crss (Typ.25pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt apability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
= 0.15Ω ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
D
S
GS
= 10V, I
TO-3PN
D
= 11.5A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Descripition
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Min.
0.24
-
-
-55 to +150
Ratings
D
S
1190
13.8
23.5
400
±30
235
300
1.8
4.5
23
92
23
Max.
0.53
December 2007
UniFET
40
-
www.fairchildsemi.com
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDA24N40F Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDA24N40F Rev. A Descripition = 11.5A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 23A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA24N40F Rev unless otherwise noted C Package Reel Size TO-3PN - Test Conditions I = 250µA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 5000 C iss = oss = oss C rss = C gd 4000 3000 C iss 2000 1000 C rss 0 0 Drain-Source Voltage [V] DS FDA24N40F Rev. A Figure 2. Transfer Characteristics 100 10 *Notes: 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 200 100 = 10V 20V ...

Page 4

... Junction Temperature J Figure 9. Maximum Drain Current vs. Case Temperature Case Temperature C Figure 10. Transient Thermal Response Curve 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDA24N40F Rev. A (Continued) Figure 8. Maximum Safe Operating Area *Notes 250 µ 100 150 200 100 125 150 ...

Page 5

... FDA24N40F Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDA24N40F Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDA24N40F Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA24N40F Rev. A FPS™ PDP-SPM™ ® FRFET Power220 Global Power Resource SM Power247 Green FPS™ POWEREDGE Green FPS™ e-Series™ ...

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