FDA18N50 Fairchild Semiconductor, FDA18N50 Datasheet
FDA18N50
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FDA18N50 Summary of contents
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... R Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FDA18N50 Rev. A Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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... DD G ≤ 19A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA18N50 Rev. A Package Reel Size TO-3PN - T = 25°C unless otherwise noted C Conditions 250µA ...
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... Drain Current and Gate Voltage 0.6 0.5 0.4 0.3 0.2 0 Drain Current [A] D Figure 5. Capacitance Characteristics 5000 4000 C oss 3000 C iss 2000 1000 C rss Drain-Source Voltage [V] DS FDA18N50 Rev. A Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 10V 20V Note : ...
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... Figure 9. Maximum Safe Operating Area Operation in This Area is Limited DS(on Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FDA18N50 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : µ 250 A 0.5 D 0.0 50 100 150 200 -100 o C] Figure 10. Maximum Drain Current 20 µ µ ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FDA18N50 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FDA18N50 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... Mechanical Dimensions FDA18N50 Rev www.fairchildsemi.com ...
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... FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ ...