FDZ197PZ Fairchild Semiconductor, FDZ197PZ Datasheet - Page 3

• Manufacturer Part Number: FDZ197PZ
• Description: MOSFET P-CH 20V 3.8A 6-WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ197PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 64 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ197PZTR

©2009 Fairchild Semiconductor Corporation
FDZ197PZ Rev.C1
Typical Characteristics
1.4
1.2
1.0
0.8
0.6
15
12
15
12
Figure 3. Normalized On- Resistance
9
6
3
0
9
6
3
0
Figure 1.
0.0
-75
0
Figure 5. Transfer Characteristics
I
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
D
V
GS
= -2 A
DS
-50
= -4.5 V
vs Junction Temperature
= -5 V
-V
-V
T
V
-25
J
GS
DS
On-Region Characteristics
GS
,
0.5
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
V
,
= -1.5 V
T
GS
DRAIN TO SOURCE VOLTAGE (V)
J
V
= 150
0
GS
= -1.8 V
1
V
= -2.5 V
GS
V
25
o
GS
C
= -3 V
µ
s
1.0
= -4.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
J
T
= 25 °C unless otherwise noted
J
= -55
75
2
T
J
= 25
1.5
o
o
100 125 150
C )
C
o
C
µ
s
2.0
3
3
0.001
0.01
150
120
2.5
2.0
1.5
1.0
0.5
0.1
90
60
30
20
10
1
Figure 2.
Figure 4.
0.0
1.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
T
T
GS
J
J
V
= 25
= 150
-V
= 0 V
1.5
GS
0.2
SD
= -1.5 V
-V
o
, BODY DIODE FORWARD VOLTAGE (V)
3
Normalized On-Resistance
C
On-Resistance vs Gate to
o
GS
I
C
D
Source Voltage
T
Source to Drain Diode
,
= -2 A
J
2.0
GATE TO SOURCE VOLTAGE (V)
= 125
-I
0.4
D
,
V
DRAIN CURRENT (A)
GS
o
6
2.5
C
= -3 V
µ
s
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
T
GS
3.0
T
J
J
= -55
= -1.8 V
9
= 25
0.8
o
o
V
C
3.5
C
GS
V
= -4.5 V
GS
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12
1.0
= -2.5 V
4.0
µ
s
1.2
4.5
15