NDB5060L Fairchild Semiconductor, NDB5060L Datasheet

MOSFET N-CH 60V 26A D2PAK

NDB5060L

Manufacturer Part Number
NDB5060L
Description
MOSFET N-CH 60V 26A D2PAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDB5060L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 5V
Input Capacitance (ciss) @ Vds
840pF @ 30V
Power - Max
68W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.042 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
26 A
Power Dissipation
68 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDB5060L
NDB5060LTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDB5060L
Manufacturer:
FSC
Quantity:
4 800
Part Number:
NDB5060L
Manufacturer:
NS
Quantity:
1 000
Absolute Maximum Ratings
Symbol
V
V
V
I
P
T
© 1997 Fairchild Semiconductor Corporation
________________________________________________________________________________
D
J
DSS
DGR
GSS
D
General Description
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters,
PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
NDP5060L / NDB5060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
,T
STG
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
Gate-Source Voltage - Continuous
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
- Nonrepetitive (t
- Continuous
- Pulsed
GS
Derate above 25°C
< 1 M )
C
P
= 25°C
< 50 µs)
T
C
= 25°C unless otherwise noted
Features
NDP5060L
26 A, 60 V. R
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
TO-220 and TO-263 (D
and surface mount applications.
R
DS(ON)
-65 to 175
DS(ON)
0.45
±16
±25
60
60
26
78
68
= 0.05
= 0.035
2
PAK) package for both through hole
G
@ V
NDB5060L
@ V
GS
= 5 V
GS
= 10 V.
DS(ON)
D
S
October 1996
.
NDP5060L Rev.A
Units
W/°C
W
°C
V
V
V
A

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NDB5060L Summary of contents

Page 1

... NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise noted) C Symbol Parameter DRAIN-SOURCE AVALANCHE RATINGS W Single Pulse Drain-Source Avalanche DSS Energy I Maximum Drain-Source Avalanche Current AR OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current ...

Page 3

Electrical Characteristics (T = 25°C unless otherwise noted) C Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS I Maximum Continuos Drain-Source Diode Forward Current S Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage SD Reverse Recovery Time t ...

Page 4

Typical Electrical Characteristics 10V 6.0 GS 5 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 13A D 1. ...

Page 5

Typical Electrical Characteristics 1. 250µA D 1.1 1.05 1 0.95 0.9 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature . 1500 1000 500 200 ...

Page 6

Typical Electrical Characteristics DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain . Current and Temperature 0.5 0.5 0.3 0.2 ...

Page 7

... These larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped. FSCINT Labe l samp le FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B CBVK741B019 1080 LOT: ...

Page 8

TO-220 Tape and Reel Data and Package Dimensions, continued TO-220 (FS PKG Code 37) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 September 1998, Rev. A ...

Page 9

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions 2 TO-263AB/D PAK Packaging Configuration: Figure 1.0 Customized Label 2 TO-263AB/D PAK Packaging Information Standard L86Z Packaging Option (no flow code) Packaging type TNR Rail/Tube Qty per Reel/Tube/Bag 800 45 ...

Page 10

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions, continued 2 TO-263AB/D PAK Embossed Carrier Tape Configuration: Figure 3 Pkg type O263AB/ 10.60 15.80 24.0 1. PAK +/-0.10 ...

Page 11

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions, continued TO-263AB/D 2 PAK (FS PKG Code 45) Scale 1:1 on letter size paper Dimensions shown below are in: Part Weight per unit (gram): 1.4378 1:1 inches [millimeters] August 1998, ...

Page 12

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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