SPB18P06P G Infineon Technologies, SPB18P06P G Datasheet - Page 6

• Manufacturer Part Number: SPB18P06P G
• Description: MOSFET P-CH 60V 18.7A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB18P06P G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 81.1W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18.6 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package: D2PAK (TO-263)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 130.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000102181; SPB18P06P G; SPB18P06PGINTR; SPB18P06PGXT

Rev 1.4
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
300
250
200
150
100
10
10
10
50
DS
=f(T
0
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=-13.2 A; V
5
20
10
98 %
-V
T
GS
j
DS
60
=-10 V
[°C]
Crss
[V]
typ.
Ciss
Coss
15
100
20
140
180
page 6
25
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
4.5
3.5
2.5
1.5
0.5
10
10
=f(T
SD
5
4
3
2
1
0
-1
-2
1
0
-60
)
0
175 °C, 98%
j
); V
j
GS
-20
0.5
=V
25 °C, typ
25 °C, 98%
DS
20
; I
1
D
=-1000 µA
-V
min.
T
j
SD
1.5
60
[°C]
typ.
[V]
max.
100
2
SPB18P06P G
175 °C, typ
140
2.5
2008-07-09
180
3