FDV301N Fairchild Semiconductor, FDV301N Datasheet

FDV301N

Manufacturer Part Number

FDV301N

Description

MOSFET N-CH 25V 220MA SOT-23

Manufacturer

Fairchild Semiconductor

Type

Power MOSFETr

Datasheet

1.FDV301N.pdf (5 pages)

Specifications of FDV301N

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4 Ohm @ 400mA, 4.5V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

220mA

Vgs(th) (max) @ Id

1.06V @ 250µA

Gate Charge (qg) @ Vgs

0.7nC @ 4.5V

Input Capacitance (ciss) @ Vds

9.5pF @ 10V

Power - Max

350mW

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

4Ohm

Drain-source On-volt

25V

Gate-source Voltage (max)

Drain Current (max)

500mA

Power Dissipation

350mW

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOT-23

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

4 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

0.2 S

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

0.5 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDV301NTR

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Current page: 1 of 5
Download datasheet (237Kb)

Symbol

ESD

THERMAL CHARACTERISTICS

Absolute Maximum Ratings

DSS

GSS

, I

This N-Channel logic level enhancement mode field effect

transistor is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. This

device has been designed especially for low voltage

applications as a replacement for digital transistors. Since

bias resistors are not required, this one N-channel FET can

replace several different digital transistors, with different bias

resistor values.

General Description

FDV301N

Digital FET , N-Channel

STG

, V

Mark:301

SOT-23

Parameter

Drain-Source Voltage, Power Supply Voltage

Gate-Source Voltage, V

Drain/Output Current

Maximum Power Dissipation

Operating and Storage Temperature Range

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

Thermal Resistance, Junction-to-Ambient

SuperSOT

-6

- Continuous

= 25

C unless other wise noted

SuperSOT

-8

Features

SO-8

25 V, 0.22 A continuous, 0.5 A Peak.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace multiple NPN digital transistors with one DMOS

FET.

DS(ON)

-55 to 150

FDV301N

0.22

0.35

6.0

357

0.5

= 5

= 4

SOT-223

@ V

I N V E R T E R A P P L I C A T I O N

GS(th)

= 2.7 V

= 4.5 V.

< 1.06V.

June 2009

SOIC-16

FDV301N Rev.F1

°C/W

Units

Vcc

°C

OUT

GND

Related parts for FDV301N

FDV301N Summary of contents

Page 1

... Replace multiple NPN digital transistors with one DMOS FET. TM SuperSOT -8 SO unless other wise noted A June 2009 2.7 V DS(ON 4.5 V. DS(ON) GS < 1.06V. GS(th) SOIC-16 SOT-223 FDV301N 25 8 0.22 0.5 0.35 -55 to 150 6.0 357 °C/W FDV301N Rev.F1 Vcc OUT GND Units °C kV ...

Page 2

... GS GEN Min Typ Max 1 0 Min Typ Max 55° 100 o C -2.1 0.70 0.85 1.06 3 =125°C 6 3.1 4 0.2 0.2 9.5 6 1.3 3 3.5 8 3.5 8 0.49 0.7 0.22 0.07 0.29 0.8 1.2 (Note) FDV301N Rev.F1 Units µ Units µA µ ...

Page 3

... DRAIN CURRENT (A) D Drain Current and Gate Voltage . I = 0.2A D 25°C 125°C 2 GATE TO SOURCE VOLTAGE ( Resistance Variation with T = 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORW A RD VOLTAGE (V) SD Body Diode Forward Voltage FDV301N Rev. 1.2 ...

Page 4

... Figure 8. Capacitance Characteristics . 0.001 Figure 10. Single Pulse Maximum Power 0.01 0 TIM E (sec rss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =357° C 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( 357 °C/W JA P(pk ( Duty Cycle FDV301N Rev.F1 C iss C oss 2 5 100 300 ...

Page 5

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDV301N Rev.F1 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...

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