BSS84 Fairchild Semiconductor, BSS84 Datasheet - Page 2
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BSS84
Manufacturer Part Number
BSS84
Description
MOSFET P-CH 50V 130MA SOT-23
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.BSS84.pdf
(5 pages)
Specifications of BSS84
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 100mA, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
130mA
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
1.3nC @ 5V
Input Capacitance (ciss) @ Vds
73pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
0.6 S
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.13 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
10Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Dc
1205
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS84TR
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Notes:
1.
Scale 1 : 1 on letter size paper
2.
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
R
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
R
the drain pins. R
Pulse Test: Pulse Width
G
GS(th)
DSS
T
T
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage.
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
a) 350°C/W when mounted on a
minimum pad..
300 s, Duty Cycle
Parameter
(Note 2)
(Note 2)
2.0%
CA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
T
D
D
F
iF
A
GS
DS
DS
GS
DS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= –0.10A
= –250 A,Referenced to 25 C
= –1 mA,Referenced to 25 C
/d
= 25°C unless otherwise noted
= –5 V,I
= –50 V,
= –50 V,V
= V
= –25V,
= –25 V,
= –25 V,
= 0 V,
= 20 V,
= –5 V,
= –5 V,
= –15 mV, f = 1.0 MHz
= –30 V,
= –10 V,
= –5 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
,
D
= –0.10 A,T
GS
I
V
V
I
I
V
I
V
I
R
I
I
D
D
D
D
D
D
S
= 0 V T
DS
GS
DS
GEN
GS
= –0.26 A
= –250 A
= –1 mA
= –0.10 A
= – 0.10 A
= – 0.27A,
= –0.10 A,
= 0 V
= – 10 V
= 0 V
= 0 V,
= 6
J
J
= 125 C
(Note 2)
=125 C
(Note 2)
Min Typ
–0.8
–0.6
0.05
–50
–1.7
–0.8
–48
1.2
1.9
0.6
2.5
6.3
4.8
0.9
0.2
0.3
73
10
10
10
3
5
9
3
–0.13
Max Units
–1.2
–15
–60
9.6
1.3
–2
10
17
13
20
10
5
BSS84 Rev B(W)
mV/ C
mV/ C
nA
pF
pF
pF
nC
nC
nC
nS
nC
ns
ns
ns
ns
V
V
A
S
A
V
A
A