FDV302P Fairchild Semiconductor, FDV302P Datasheet - Page 7

• Manufacturer Part Number: FDV302P
• Description: MOSFET P-CH 25V 120MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of FDV302P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 120mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 11pF @ 10V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.135 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.12 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDV302PTR

SOPL1
TMCL1
Device #10 FPF2005
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
HAST2
HTSL
SOPL1
TMCL1
Device #11 FPF2105
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
HAST2
HTSL
SOPL1
TMCL1
Device #12 FPF2500
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
HAST2
HTSL
SOPL1
TMCL1
X
P/C
P/C
X
X
P/C
X
X
X
P/C
X
X
X
006
006
006
P/C
P/C
Standard
JESD22-A113
JESD22-A108 150C, 5V
JESD22-A104 -65C, 150C
Standard
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A108 150C, 0V
JESD22-A104 -65C, 150C
Standard
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A108 150C, 0V
JESD22-A104 -65C, 150C
Standard
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A108 150C, 0V
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Standard
JESD22-A113
Conditions
0V
Conditions
0V
Conditions
0V
Conditions
Conditions
Conditions
168
100
Readpoints
TP1
264
168
168
100
Readpoints
TP1
264
168
168
100
Readpoints
TP1
264
168
168
100
500
500
TP2
500
500
500
TP2
500
500
500
TP2
500
500
500
Read-
points
1000
TP3
1000
1000
TP3
1000
1000
TP3
1000
1000
Sample
Read-
points
Read-
points
A
0
77
77
Samples
A
45
77
77
77
Samples
A
45
77
77
77
Samples
A
45
77
77
77
Sample
Sample
B
0
B
45
77
77
77
A
A
0
0
C
0
C
45
77
77
77
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