FDV302P_NB8V001 Fairchild Semiconductor, FDV302P_NB8V001 Datasheet

FDV302P_NB8V001

Manufacturer Part Number

FDV302P_NB8V001

Description

MOSFET P-CH 25V 120MA SOT-23

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDV302P.pdf (4 pages)

Specifications of FDV302P_NB8V001

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

10 Ohm @ 200mA, 4.5V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

120mA

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

0.31nC @ 4.5V

Input Capacitance (ciss) @ Vds

11pF @ 10V

Power - Max

350mW

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

10 Ohm @ 4.5 V

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

0.12 A

Power Dissipation

350 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Symbol

ESD

THERMAL CHARACTERISTICS

This P-Channel logic level enhancement mode field effect

transistor is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. This

device has been designed especially for low voltage

applications as a replacement for digital transistors. Since

bias resistors are not required, this one P-channel FET can

replace several digital transistors with different bias resistors

such as the DTCx and DCDx series.

Absolute Maximum Ratings

General Description

DSS

GSS

FDV302P

Digital FET, P-Channel

Mark:302

STG

SOT-23

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Maximum Power Dissipation

Operating and Storage Temperature Range

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

Thermal Resistance, Junction-to-Ambient

SuperSOT

-6

- Continuous

- Pulsed

= 25

C unless otherwise noted

SuperSOT

-8

Features

SO-8

-25 V, -0.12 A continuous, -0.5 A Peak.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.

Replace many PNP digital transistors (DTCx and DCDx)

with one DMOS FET.

DS(ON)

-55 to 150

FDV302P

-0.12

0.35

= 13

= 10

-0.5

357

6.0

-25

-8

SOT-223

@ V

GS(th)

< 1.5V.

= -2.7 V

= -4.5 V.

October 1997

SOIC-16

FDV302P REV. F

Units

°C/W

°C

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FDV302P_NB8V001 Summary of contents

Page 1

... Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient JA © 1997 Fairchild Semiconductor Corporation Features -25 V, -0.12 A continuous, -0.5 A Peak. Very low level gate drive requirements allowing direct operation in 3V circuits. V Gate-Source Zener for ESD ruggedness. ...

Page 2

Electrical Characteristics (T A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temp. Coefficient DSS J Zero Gate Voltage Drain Current I DSS I Gate - Body Leakage Current GSS ON CHARACTERISTICS (Note) Gate ...

Page 3

Typical Electrical Characteristics 0.2 -4 -5.0V GS -3.5 -4.5 -3.0 0.15 -2.7 0.1 0. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -0.05A -2.7V 1.4 GS ...

Page 4

Typical Electrical And Thermal Characteristics - 0.1 0.2 0 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 1 0.5 0.2 0.1 0.05 V ...

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