FDV302P_NB8V001 Fairchild Semiconductor, FDV302P_NB8V001 Datasheet

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FDV302P_NB8V001

Manufacturer Part Number
FDV302P_NB8V001
Description
MOSFET P-CH 25V 120MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDV302P_NB8V001

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
120mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.31nC @ 4.5V
Input Capacitance (ciss) @ Vds
11pF @ 10V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 4.5 V
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.12 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
I
P
T
ESD
THERMAL CHARACTERISTICS
R
© 1997 Fairchild Semiconductor Corporation
D
This P-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one P-channel FET can
replace several digital transistors with different bias resistors
such as the DTCx and DCDx series.
Absolute Maximum Ratings
General Description
DSS
GSS
D
J
,T
FDV302P
Digital FET, P-Channel
JA
Mark:302
STG
SOT-23
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
Thermal Resistance, Junction-to-Ambient
SuperSOT
TM
-6
- Continuous
- Pulsed
T
A
= 25
o
C unless otherwise noted
SuperSOT
TM
-8
Features
SO-8
-25 V, -0.12 A continuous, -0.5 A Peak.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
Replace many PNP digital transistors (DTCx and DCDx)
with one DMOS FET.
R
R
DS(ON)
DS(ON)
G
-55 to 150
FDV302P
-0.12
0.35
= 13
= 10
-0.5
357
6.0
-25
-8
SOT-223
D
@ V
@ V
GS(th)
GS
GS
< 1.5V.
= -2.7 V
= -4.5 V.
S
October 1997
SOIC-16
FDV302P REV. F
Units
°C/W
°C
kV
W
V
V
A

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FDV302P_NB8V001 Summary of contents

Page 1

... Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient JA © 1997 Fairchild Semiconductor Corporation Features -25 V, -0.12 A continuous, -0.5 A Peak. Very low level gate drive requirements allowing direct operation in 3V circuits. V Gate-Source Zener for ESD ruggedness. ...

Page 2

Electrical Characteristics (T A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temp. Coefficient DSS J Zero Gate Voltage Drain Current I DSS I Gate - Body Leakage Current GSS ON CHARACTERISTICS (Note) Gate ...

Page 3

Typical Electrical Characteristics 0.2 -4 -5.0V GS -3.5 -4.5 -3.0 0.15 -2.7 0.1 0. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -0.05A -2.7V 1.4 GS ...

Page 4

Typical Electrical And Thermal Characteristics - 0.1 0.2 0 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 1 0.5 0.2 0.1 0.05 V ...

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