FDN360P Fairchild Semiconductor, FDN360P Datasheet - Page 8

• Manufacturer Part Number: FDN360P
• Description: MOSFET P-CH 30V 2A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN360P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 298pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN360PTR

NDS356AP
SI3442DV_F073
SI3456DV_NL
SI3457DV_F095
NDS356AP_NB8L005A
SI3443DV
SI3457DV
SI3457DV_NL
NDS356AP_NL
SI3443DV_F095
SI3457DV_F073
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