FDN308P Fairchild Semiconductor, FDN308P Datasheet
FDN308P
Manufacturer Part Number
FDN308P
Description
MOSFET P-CH 20V 1.5A SSOT-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN308P.pdf
(5 pages)
Specifications of FDN308P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
5.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
341pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.5 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN308P
Manufacturer:
FAIRCHILD
Quantity:
6 000
Part Number:
FDN308P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN308P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN308P-NL/308
Manufacturer:
ELM
Quantity:
20 000
FDN308P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
SuperSOT -3
308
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
TM
G
– Continuous
– Pulsed
FDN308P
Device
Parameter
S
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–20 V, –1.5 A.
Fast switching speed
High performance trench technology for extremely
low R
SuperSOT
power handling capability than SOT23 in the same
footprint
DS(ON)
TM
-3 provides low R
Tape width
G
–55 to +150
8mm
R
R
Ratings
DS(ON)
DS(ON)
–1.5
0.46
–20
–10
250
0.5
75
12
D
= 125 m
= 190 m
S
DS(ON)
February 2001
@ V
@ V
and 30% higher
3000 units
GS
GS
FDN308P Rev B(W)
Quantity
= –4.5 V
= –2.5 V
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
FDN308P Summary of contents
Page 1
... Reel Size 7’’ February 2001 R = 125 –4.5 V DS(ON 190 –2.5 V DS(ON provides low R and 30% higher DS(ON Ratings Units – –1.5 A –10 W 0.5 0.46 –55 to +150 C 250 C/W 75 C/W Tape width Quantity 8mm 3000 units FDN308P Rev B(W) ...
Page 2
... Min Typ Max Units –20 V –13 mV/ C –1 100 nA –100 nA –0.6 –1.0 –1 mV 125 m 136 190 114 178 =125 C J – 341 3.8 5.4 nC 0.8 nC 1.0 nC –0.42 A –0.7 –1.2 V (Note 2) FDN308P Rev B(W) A ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.5V GS -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -0 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDN308P Rev B( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 270 °C/W JA P(pk ( Duty Cycle 100 1000 FDN308P Rev B(W) 20 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...