FQT3P20TF Fairchild Semiconductor, FQT3P20TF Datasheet - Page 4

• Manufacturer Part Number: FQT3P20TF
• Description: MOSFET P-CH 200V 0.67A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQT3P20TF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 335mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 670mA
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Forward Transconductance Gfs (max / Min): 0.7 S
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 0.67 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
1.2
1.1
1.0
0.9
0.8
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
-3
1
0
10
Figure 7. Breakdown Voltage Variation
-1
-50
10
T
vs. Temperature
-V
0
J
, Junction Temperature [
DS
0
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
- 1
C
J
1
0
1 0
= 150
= 25
- 5
0 . 0 2
o
0 . 0 5
0 . 0 1
C
o
D = 0 .5
DS(on)
C
0 . 2
0 . 1
50
10
1
Figure 11. Transient Thermal Response Curve
DC
1 0
- 4
100
(Continued)
100 ms
o
C]
10 ms
※ Notes :
s in g le p u ls e
1. V
2. I
D
1 ms
1 0
t
G S
= -250 μ A
10
1
= 0 V
150
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
2
- 3
100 s
200
1 0
- 2
1 0
- 1
2.5
2.0
1.5
1.0
0.5
0.0
0.8
0.6
0.4
0.2
0.0
-100
25
1 0
0
Figure 8. On-Resistance Variation
※ N o t e s :
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
θ J C
J M
-50
DM
- T
50
( t ) = 5 0 ℃ /W M a x .
1 0
vs. Case Temperature
C
1
= P
T
vs. Temperature
t
J
T
D M
1
, Junction Temperature [
C
t
0
, Case Temperature [ ℃ ]
2
* Z
1
75
/ t
θ J C
1 0
2
( t )
2
50
100
1 0
3
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -0.335 A
= -10 V
150
Rev. A, May 2001
200