FDG328P Fairchild Semiconductor, FDG328P Datasheet - Page 3

MOSFET P-CH 20V 1.5A SC70-6

FDG328P

Manufacturer Part Number
FDG328P
Description
MOSFET P-CH 20V 1.5A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDG328P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
145 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
337pF @ 10V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.145 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.5 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG328P
Manufacturer:
Fairchild Semiconductor
Quantity:
29 231
Part Number:
FDG328P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDG328P
Quantity:
3 000
Typical Characteristics
Typical Characteristics
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0.5
0
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
1
V
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
-50
DS
V
= -5V
GS
V
= -4.5V
I
D
GS
= -1.5A
-25
= -4.5V
0.5
1
-V
-V
withTemperature.
GS
-3.0V
Characteristics
DS
, GATE TO SOURCE VOLTAGE (V)
T
0
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
-3.5V
1.5
1
25
-2.5V
50
1.5
2
T
75
A
= -55
-2.0V
o
C
100
o
C)
2.5
-1.8V
125
2
o
C
25
125
o
C
150
2.5
3
Figure 6. Body Diode Forward Voltage Variation
0.35
0.25
0.15
0.05
0.4
0.3
0.2
0.1
0.0001
0.001
Figure 4. On-Resistance Variation with
0.01
with Source Current and Temperature.
2.25
1.75
1.25
0.75
1.5
0.1
2.5
1.5
10
1
2
1
0
0
T
V
V
A
GS
2
GS
= 25
Gate-to-Source Voltage.
= 0V
0.2
= -2.0V
-V
o
1
C
-V
SD
GS
T
, BODY DIODE FORWARD VOLTAGE (V)
2.5
, GATE TO SOURCE VOLTAGE (V)
A
= 125
0.4
T
-I
Current
A
2
D
o
, DRAIN CURRENT (A)
= 125
C
-2.5V
3
0.6
25
o
C
o
C
3
-3.0V
3.5
-55
0.8
o
C
4
4
-3.5V
1
FDG328P Rev C(W)
I
D
-4.5V
4.5
5
= -0.8 A
1.2
1.4
5
6

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