FQP4N25 Fairchild Semiconductor, FQP4N25 Datasheet - Page 30
FQP4N25
Manufacturer Part Number
FQP4N25
Description
MOSFET N-CH 250V 3.6A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP4N25.pdf
(214 pages)
Specifications of FQP4N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
52W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQP4N25
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQP4N25
Manufacturer:
FSC
Quantity:
86 755
- Current page: 30 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
TO-251 (IPAK)
FDU6512A
FDU6688
FDU3706
FDU044AN03L
FDU8870
FDU068AN03L
FDU8896
ISL9N306AD3
FDU6682
ISL9N308AD3
FDU6696
FDU8876
FDU6644
FDU6296
FDU6680A
FDU7030BL
FDU8880
FDU6680
FDU6692
ISL9N312AD3
FDU8878
ISL9N315AD3
FDU6030BL
HUF76129D3
FDU6612A
HUF76121D3
HUF76107D3
RFD16N05
RFD14N05
HUFA75329D3
HUFA75321D3
HUFA75309D3
HUFA75307D3
HUFA76429D3
HUF76423D3
HUFA76423D3
HUF76419D3
HUFA76419D3
TO-251(IPAK) N-Channel
Products
Min. (V)
BV
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
50
50
55
55
55
55
60
60
60
60
60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0039
0.0039
0.0057
0.0057
0.0062
0.0082
0.0085
0.0088
0.0095
0.0095
0.005
0.009
0.006
0.008
0.008
0.012
0.012
0.015
0.015
0.016
0.016
0.023
0.047
0.026
0.036
0.023
0.032
0.032
0.037
0.037
10V
0.01
0.01
0.02
0.07
0.09
0.1
–
R
DS(ON)
0.0044
0.0044
0.0068
0.0068
0.0095
0.0107
0.0105
0.0113
0.0145
0.0185
0.021
0.006
0.011
0.008
0.013
0.013
0.013
0.015
0.028
0.022
0.023
0.028
0.033
0.027
0.037
0.037
0.043
0.043
4.5V
0.01
0.02
–
–
–
–
–
–
–
Max (Ω) @ V
2-25
0.031
0.016
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Replaced by FDD6630A
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
22.5
GS
6.7
12
37
16
91
91
24
46
30
24
24
17
34
25
14
14
23
13
18
13
19
18
22
22
13
35
19
32
21
11
38
28
28
23
23
9
= 5V
I
D
36
84
50
35
35
35
94
50
75
50
50
73
67
50
56
56
58
46
54
50
40
30
42
20
30
20
16
14
20
20
19
15
20
20
20
20
20
(A)
MOSFETs
P
D
160
160
125
100
105
128
110
43
83
44
80
80
71
52
70
68
52
60
60
55
56
57
75
40
55
50
36
75
72
48
93
55
45
85
85
75
75
(W)
Related parts for FQP4N25
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: