FDC653N Fairchild Semiconductor, FDC653N Datasheet
FDC653N
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FDC653N Summary of contents
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... Exceptional on-resistance and maximum DC current capability. TM SuperSOT -8 SO 25°C unless otherwise note A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) November 1997 = 0.035 @ DS(ON 0.055 @ V = 4.5 V. DS(ON package design using copper . DS(ON) SOIC-16 SOT-223 FDC653N 30 ± 1.6 0.8 -55 to 150 78 30 FDC653N Rev.C Units °C °C/W °C/W ...
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... 250 µA, Referenced 4 4 1.0 MHz 4 GEN 1 Min Typ Max 100 -100 1 1 -4.2 C 0.027 0.035 125 C 0.042 0.056 J 0.046 0.055 8 6.2 350 220 80 7 2.1 2.6 1.3 0.75 1.2 (Note 125 C 0 Units µA µ guaranteed by FDC653N Rev.C ...
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... I , DRAIN CURRENT (A) D Drain Current and Gate Voltage 125° 25° GATE TO SOURCE VOLTAGE (V) GS Gate-To- Source Voltage 125°C A 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDC653N Rev 1.2 ...
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... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec iss C oss C rss = 0V 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =See note 25° 100 SINGLE PULSE TIME (SEC) Dissipation. R ( See Note 1b JA P(pk ( Duty Cycle 100 300 FDC653N Rev.B 30 300 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...