FDD306P Fairchild Semiconductor, FDD306P Datasheet - Page 4

• Manufacturer Part Number: FDD306P
• Description: MOSFET P-CH 12V 6.7A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD306P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6.7A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1290pF @ 6V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 6.7A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -500mV
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 52 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD306P Rev. C
Typical Characteristics
1000
0.01
100
0.1
10
5
4
3
2
1
0
1
0.1
0
Figure 9. Maximum Safe Operating Area.
SINGLE PULSE
I
R
D
Figure 7. Gate Charge Characteristics.
R
θ JA
V
DS(ON)
= -6.7A
T
GS
A
= 96
0.001
= 25
=-4.5V
0.01
0.1
LIMIT
o
0.0001
o
1
C/W
C
4
-V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
0.2
0.1
0.05
1
DC
0.02
Q
g
0.01
, GATE CHARGE (nC)
10s
8
SINGLE PULSE
V
DS
1s
0.001
= -4V
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10ms
12
Figure 11. Transient Thermal Response Curve.
10
-6V
1ms
-8V
0.01
16
100
20
0.1
4
t
1
, TIME (sec)
2400
2000
1600
1200
800
400
20
15
10
5
0
0
0.001
0
Figure 8. Capacitance Characteristics.
1
Figure 10. Single Pulse Maximum
0.01
C
rss
-V
DS
3
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
10
oss
t
1
, TIME (sec)
6
1
P(pk)
C
Duty Cycle, D = t
T
iss
R
J
R
θ JA
100
- T
10
θ JA
(t) = r(t) * R
A
t
= 96 °C/W
1
= P * R
t
2
9
SINGLE PULSE
R
θ JA
www.fairchildsemi.com
T
V
100
f = 1MHz
A
θ JA
GS
= 96°C/W
= 25°C
θ JA
1
/t
(t)
= 0 V
2
1000
1000
12