FDD306P Fairchild Semiconductor, FDD306P Datasheet - Page 4
![MOSFET P-CH 12V 6.7A D-PAK](/photos/5/38/53880/261-dpak_sml.jpg)
FDD306P
Manufacturer Part Number
FDD306P
Description
MOSFET P-CH 12V 6.7A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD306P.pdf
(5 pages)
Specifications of FDD306P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6.7A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 4.5V
Input Capacitance (ciss) @ Vds
1290pF @ 6V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
6.7A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
90mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-500mV
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.028 Ohms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
6.7 A
Power Dissipation
52 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD306P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDD306P Rev. C
Typical Characteristics
1000
0.01
100
0.1
10
5
4
3
2
1
0
1
0.1
0
Figure 9. Maximum Safe Operating Area.
SINGLE PULSE
I
R
D
Figure 7. Gate Charge Characteristics.
R
θ JA
V
DS(ON)
= -6.7A
T
GS
A
= 96
0.001
= 25
=-4.5V
0.01
0.1
LIMIT
o
0.0001
o
1
C/W
C
4
-V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
0.2
0.1
0.05
1
DC
0.02
Q
g
0.01
, GATE CHARGE (nC)
10s
8
SINGLE PULSE
V
DS
1s
0.001
= -4V
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10ms
12
Figure 11. Transient Thermal Response Curve.
10
-6V
1ms
-8V
0.01
16
100
20
0.1
4
t
1
, TIME (sec)
2400
2000
1600
1200
800
400
20
15
10
5
0
0
0.001
0
Figure 8. Capacitance Characteristics.
1
Figure 10. Single Pulse Maximum
0.01
C
rss
-V
DS
3
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
10
oss
t
1
, TIME (sec)
6
1
P(pk)
C
Duty Cycle, D = t
T
iss
R
J
R
θ JA
100
- T
10
θ JA
(t) = r(t) * R
A
t
= 96 °C/W
1
= P * R
t
2
9
SINGLE PULSE
R
θ JA
www.fairchildsemi.com
T
V
100
f = 1MHz
A
θ JA
GS
= 96°C/W
= 25°C
θ JA
1
/t
(t)
= 0 V
2
1000
1000
12