FDFM2P110 Fairchild Semiconductor, FDFM2P110 Datasheet - Page 5

• Manufacturer Part Number: FDFM2P110
• Description: MOSFET P-CH 20V 3.5A 3X3 MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFM2P110

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 140 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 280pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Configuration: Single Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.001
5
4
3
2
1
0
0.01
Figure 9.
0
0.1
10
1
Figure 7.
I
0
D
= -3.5A
T
J
= 125
0.1
Schottky Diode Forward Voltage
o
1
C
Gate Charge Characteristics
0.2
V
F
, FORWARD VOLTAGE (V)
Q
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
g
, GATE CHARGE (nC)
0.3
T
J
= 25
V
2
0.4
DS
Figure 11. Transient Thermal Response Curve
o
= -5V
C
0.5
-15V
0.6
3
-10V
0.7
0.8
4
5
500
400
300
200
100
0.000001
Figure 10.
0.00001
0
0.0001
0.001
0
0.01
Figure 8.
0.1
C
rss
0
C
oss
4
Schottky Diode Reverse Current
-V
Capacitance Characteristics
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
V
C
R
iss
T
, REVERSE VOLTAGE (V)
T
J
T
J
= 125
J
8
= 100
= 25
o
o
o
C
C
C
10
12
FDFM2P110 Rev. C4 (W)
15
16
V
f = 1MHz
GS
= 0 V
20
20