FQD5P10TM Fairchild Semiconductor, FQD5P10TM Datasheet

MOSFET P-CH 100V 3.6A DPAK

FQD5P10TM

Manufacturer Part Number
FQD5P10TM
Description
MOSFET P-CH 100V 3.6A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQD5P10TM

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.05 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.05 Ohms
Forward Transconductance Gfs (max / Min)
2.3 S
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 3.6 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD5P10TM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FQD5P10TM
Quantity:
25 000
©2008 Fairchild Semiconductor Corporation
FQD5P10 / FQU5P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D-PAK
FQD Series
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
= 25°C)
Parameter
G
T
C
C
C
= 25°C unless otherwise noted
D
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
• RoHS Compliant
Features
• -3.6A, -100V, R
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
I-PAK
FQU Series
FQD5P10 / FQU5P10
Typ
--
--
--
DS(on)
-55 to +150
= 1.05
-2.28
-14.4
-100
-3.6
-3.6
-6.0
300
2.5
2.5
0.2
55
25
G
30
@V
Max
110
5.0
50
October 2008
GS
D
S
QFET
= -10 V
Rev. B1, October 2008
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

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FQD5P10TM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation Features • -3.6A, -100V, R • Low gate charge ( typical 6.3 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 6.4mH -3.6A -25V ≤ -4.5A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -100 ...

Page 3

... Drain Current and Gate Voltage 500 450 C 400 oss C 350 iss 300 250 200 C rss 150 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation 1 10 150℃ 25℃ Figure 2. Transfer Characteristics ※ Note : T = 25℃ 0.0 0 Figure 4. Body Diode Forward Voltage Variation vs ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 4 3 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions ©2008 Fairchild Semiconductor Corporation D - PAK Dimensions in Millimeters Rev. B1, October 2008 ...

Page 8

... Package Dimensions ©2008 Fairchild Semiconductor Corporation I - PAK Dimensions in Millimeters Rev. B1, October 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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