FDT458P Fairchild Semiconductor, FDT458P Datasheet
FDT458P
Manufacturer Part Number
FDT458P
Description
MOSFET P-CH 30V 3.4A SOT-223
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDT458P.pdf
(5 pages)
Specifications of FDT458P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
3.5nC @ 10V
Input Capacitance (ciss) @ Vds
205pF @ 15V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.4 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
3.4A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
105mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
1.8V
Transistor Case Style
SOT-223
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDT458P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDT458P
30V P-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
Applications
2001 Fairchild Semiconductor Corporation
DS(ON)
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery chargers
Motor drives
D
J
DSS
GSS
, T
JA
J C
Device Marking
STG
P-Channel
specifications.
SOT-223
D
458P
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
G
MOSFET
D
S
– Continuous
– Pulsed
has
G
FDT458P
Device
Parameter
been
D
D
designed
S
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
3.4 A, –30 V. R
Fast switching speed
Low gate charge (2.5 nC typical)
High performance trench technology for extremely
low R
High power and current handling capability in a
widely used surface mount package
SOT-223
D
(J23Z)
DS(ON)
*
G
Tape width
R
DS(ON)
DS(ON)
–55 to +150
12mm
Ratings
S
– 30
3.4
3.0
1.3
1.1
10
42
12
20
= 130 m @ V
= 200 m @ V
G
D
GS
GS
June 2001
S
FDT458P Rev. B(W)
2500 units
= 10 V
= 4.5 V
Quantity
Units
C/W
C/W
W
V
V
A
C
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FDT458P Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ June 2001 = 130 DS(ON 200 4.5 V DS(ON Ratings Units – 3 3.0 1.3 1.1 –55 to +150 C 42 C/W 12 C/W Tape width Quantity 12mm 2500 units FDT458P Rev. B(W) ...
Page 2
... Typ Max Units –30 V –23 mV/ C –1 100 nA –100 nA –1 –1.8 – mV/ C 105 130 m 157 200 147 210 =125 C – 205 4 12 2.5 3 –2.5 A –0.8 –1.2 V (Note 2) c) 110°C/W when mounted on a minimum pad. FDT458P Rev. B(W) A ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. V =-4.5V GS -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage. = 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDT458P Rev. B( 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum 0 TIME (sec MHz ISS OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 110 0.01 0 100 1000 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 110 °C/W JA P(pk ( Duty Cycle 100 1000 FDT458P Rev. B(W) ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...