FDD8876 Fairchild Semiconductor, FDD8876 Datasheet - Page 8
![MOSFET N-CH 30V 73A D-PAK](/photos/5/38/53880/261-dpak_sml.jpg)
FDD8876
Manufacturer Part Number
FDD8876
Description
MOSFET N-CH 30V 73A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD8876.pdf
(11 pages)
Specifications of FDD8876
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
73A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
1700pF @ 15V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.011 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
73 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
37 ns
Minimum Operating Temperature
- 55 C
Rise Time
91 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD8876
Manufacturer:
FAIRCHILD
Quantity:
30 000
©2008 Fairchild Semiconductor Corporation
PSPICE Electrical Model
.SUBCKT FDD8876 2 1 3 ; rev January 2004
Ca 12 8 1.9e-9
Cb 15 14 1.6e-9
Cin 6 8 1.55e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 33.15
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 4.7e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 1.7e-9
RLgate 1 9 47
RLdrain 2 5 10
RLsource 3 7 17
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 2.9e-3
Rgate 9 20 2.2
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 2.7e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*300),10))}
.MODEL DbodyMOD D (IS=3E-12 IKF=10 N=1.01 RS=3.4e-3 TRS1=8e-4 TRS2=2e-7
+ CJO=6.3e-10 M=0.57 TT=1e-17 XTI=2)
.MODEL DbreakMOD D (RS=1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=6.1e-10 IS=1e-30 N=10 M=0.41)
.MODEL MmedMOD NMOS (VTO=1.95 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.2 T_ABS=25)
.MODEL MstroMOD NMOS (VTO=2.45 KP=250 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25)
.MODEL MweakMOD NMOS (VTO=1.65 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=22 RS=0.1 T_ABS=25)
.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-8e-7)
.MODEL RdrainMOD RES (TC1=1e-4 TC2=8e-6)
.MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=7.5e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-1.7e-3 TC2=-8.2e-6)
.MODEL RvtempMOD RES (TC1=-2.6e-3 TC2=2e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-1.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-2)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
RSLC2
6
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
+
-
MSTRO
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
MWEAK
17
RVTHRES
RBREAK
11
+
-
17
18
7
+
18
-
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
FDD8876 / FDU8876 Rev. A3
SOURCE
DRAIN
2
3