FQD3N50CTM Fairchild Semiconductor, FQD3N50CTM Datasheet - Page 2

• Manufacturer Part Number: FQD3N50CTM
• Description: MOSFET N-CH 500V 2.5A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD3N50CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 365pF @ 25V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.1 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQD3N50C / FQU3N50C Rev. B
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 58mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
J
DSS
≤ 2.5A, di/dt ≤200A/µs, V
DSS
FQD3N50C
FQD3N50C
FQU3N50C
/
AS
=2.5A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
FQD3N50CTM
≤ BV
FQU3N50CTU
FQD3N50CTF
G
Device
Parameter
DSS,
= 25 Ω, Starting T
Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
Package
D-PAK
D-PAK
I-PAK
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= 500 V, V
= 400 V, T
= V
= 40 V, I
= 25 V, V
= 400 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 250 V, I
= 10 V
= 0 V, I
= 0 V, I
2
Test Conditions
GS
Reel Size
, I
D
S
S
D
380mm
380mm
D
D
= 2.5 A
= 3 A,
= 250 µA
DS
GS
D
D
= 250 µA
DS
= 1.25 A
GS
C
= 1.25 A
= 2.5A,
= 2.5A,
-
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
16mm
16mm
Min
500
2.0
-
--
--
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--
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--
--
--
--
--
--
--
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--
--
--
--
--
--
Typ
280
170
0.7
2.1
1.5
8.5
1.5
5.5
0.7
50
10
25
35
25
10
--
--
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Quantity
Max Units
-100
100
365
4.0
2.5
2.5
1.4
www.fairchildsemi.com
10
65
11
30
60
80
60
13
10
--
--
1
--
--
--
--
--
2500
2500
70
V/°C
µA
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V