FDT3612 Fairchild Semiconductor, FDT3612 Datasheet

FDT3612

Manufacturer Part Number

FDT3612

Description

MOSFET N-CH 100V 3.7A SOT-223

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDT3612.pdf (5 pages)

Specifications of FDT3612

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

120 mOhm @ 3.7A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

3.7A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

20nC @ 10V

Input Capacitance (ciss) @ Vds

632pF @ 50V

Power - Max

1.1W

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Configuration

Single Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.12 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

11 S

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

3.7 A

Power Dissipation

3000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Fall Time

4.5 ns

Rise Time

2 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Part Number:

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FDT3612

100V N-Channel PowerTrench MOSFET

General Description

This

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

easy and safer to drive (even at very high frequencies),

and DC/DC power supply designs with higher overall

efficiency.

Applications

2001 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DS(ON)

DC/DC converter

Motor driving

DSS

GSS

, T

Device Marking

STG

N-Channel

specifications. The result is a MOSFET that is

SOT-223

3612

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Maximum Power Dissipation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

MOSFET

– Continuous

– Pulsed

has

FDT3612

Device

Parameter

been

designed

=25

C unless otherwise noted

Reel Size

13’’

(Note 1a)

(Note 1b)

(Note 1a)

(Note 1c)

(Note 1)

Features

3.7 A, 100 V. R

Fast switching speed

Low gate charge (14nC typ)

High performance trench technology for extremely

High power and current handling capability in a

low R

widely used surface mount package

SOT-223

(J23Z)

DS(ON)

Tape width

DS(ON)

–55 to +150

12mm

Ratings

100

3.7

3.0

1.3

1.1

= 120 m

= 130 m

@ V

March 2001

FDT3612 Rev. C1 (W)

2500 units

= 10 V

= 6 V

Quantity

Units

C/W

Related parts for FDT3612

FDT3612 Summary of contents

Page 1

... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ March 2001 = 120 DS(ON 130 DS(ON Ratings Units 100 3 3.0 1.3 1.1 –55 to +150 C 42 C/W 12 C/W Tape width Quantity 12mm 2500 units FDT3612 Rev. C1 (W) ...

Page 2

... Min Typ Max Units 90 mJ 3.7 A 100 V 106 mV 100 nA –100 –6 mV 120 m 94 130 170 245 632 8 4 2.4 nC 3.8 nC 2.5 A 0.75 1 110°C/W when mounted on a minimum pad. FDT3612 Rev. C1 (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4.0V GS 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 1 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDT3612 Rev 1.4 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C RSS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 110°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 110°C Duty Cycle 100 FDT3612 Rev. C1 (W) 100 100 1000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...

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