FDD8796 Fairchild Semiconductor, FDD8796 Datasheet
FDD8796
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FDD8796 Summary of contents
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... Thermal Resistance, Junction to Ambient TO-252,1in θJA Package Marking and Ordering Information Device Marking Device FDD8796 FDD8796 FDU8796 FDU8796 FDU8796 FDU8796_F071 ©2006 Fairchild Semiconductor Corporation FDD8796/FDU8796 Rev. B ® MOSFET Features Max r = 5.7mΩ DS(on) Max r = 8.0mΩ DS(on) Low gate charge: Q Low gate resistance ...
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... Source to Drain Diode Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes: 1: Pulse time < 300µs, Duty cycle = 2%. 2: Starting T = 25° 0.3mH 24.7A FDD8796/FDU8796 Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to D 25° 20V ...
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... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 70 µ PULSE DURATION = 80 60 DUTY CYCLE = 0.5%MAX GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD8796/FDU8796 Rev 25°C unless otherwise noted J 4.0 3.5 µ s 3.0 2.5 2.0 1 1.0 0 Figure 2. Normalized 120 160 200 o ...
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... LIMITED BY PACKAGE 1 SINGLE PULSE OPERATION IN THIS = MAX RATED AREA MAY LIMITED BY DS(on 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD8796/FDU8796 Rev 25°C unless otherwise noted J 4000 1000 V = 13V DD 100 0 Figure 8. Capacitance vs Drain to Source Voltage 100 125 ...
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... Typical Characteristics 2 DUTY CYCLE-DESENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 1E Figure 13. FDD8796/FDU8796 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION(s) Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDD8796/FDU8796 Rev. B ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ ...