HUFA76409D3S Fairchild Semiconductor, HUFA76409D3S Datasheet

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HUFA76409D3S

Manufacturer Part Number
HUFA76409D3S
Description
MOSFET N-CH 60V 18A DPAK
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUFA76409D3S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
63 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
49W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUFA76409D3ST
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
HUFA76409D3ST-B76008A
Quantity:
25 000
©2001 Fairchild Semiconductor Corporation
17A, 60V, 0.071 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
Packaging
Symbol
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTE:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
1. T
Continuous (T
Continuous (T
Continuous (T
Continuous (T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(FLANGE)
DRAIN
J
= 25
JEDEC TO-251AA
HUFA76409D3
o
C to 150
C
C
C
C
= 25
= 25
= 135
= 135
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
o
o
C, V
C, V
o
o
GS
G
C, V
C, V
SOURCE
DRAIN
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
GS
GATE
GS
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
S
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
SOURCE
T
Data Sheet
C
GATE
= 25
JEDEC TO-252AA
HUFA76409D3ST
o
C, Unless Otherwise Specified
(FLANGE)
DRAIN
HUFA76409D3, HUFA76409D3ST
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
Ordering Information
HUFA76409D3
HUFA76409D3ST
- r
- r
- Temperature Compensated PSPICE® and SABER™
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
PART NUMBER
Electrical Models
DS(ON)
DS(ON)
December 2001
J
, T
= 0.063
= 0.071
DGR
DSS
STG
pkg
DM
GS
D
D
D
D
D
L
HUFA76409D3, HUFA76409D3SS
TO-251AA
TO-252AA
GS
V
V
PACKAGE
GS
GS
Curves
Figures 6, 17, 18
-55 to 175
Figure 4
10V
5V
0.327
300
260
60
60
17
18
49
16
8
8
HUFA76409D3, HUFA76409D3ST Rev. A1
76409D
76409D
BRAND
UNITS
W/
o
o
o
W
V
V
V
A
A
A
A
C
C
C
o
C

Related parts for HUFA76409D3S

HUFA76409D3S Summary of contents

Page 1

... Switching Time vs R Ordering Information PART NUMBER HUFA76409D3 HUFA76409D3ST o C, Unless Otherwise Specified = 0.063 10V 0.071 Curves GS PACKAGE BRAND TO-251AA 76409D TO-252AA 76409D HUFA76409D3, HUFA76409D3SS 60 DSS 60 DGR Figure 4 DM Figures 6, 17 0.327 , T -55 to 175 J STG 300 L 260 pkg HUFA76409D3, HUFA76409D3ST Rev. A1 UNITS ...

Page 2

... 8A, dI /dt = 100A MIN TYP (Figure 12 0.052 - 0.060 - 0.064 - - - - - - - 5 30V 6.8 = 1.0mA - 0. 485 - 130 - 28 MIN TYP - - - - - - - - HUFA76409D3, HUFA76409D3ST Rev. A1 MAX UNITS - 250 A 100 0.063 0.071 0.075 o 3.06 C/W o 100 C/W 153 136 8 MAX UNITS 1. 165 nC ...

Page 3

... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 4. 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUFA76409D3, HUFA76409D3ST Rev. A1 175 ...

Page 4

... C DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 2.5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE HUFA76409D3, HUFA76409D3ST Rev DSS +1] DSS 100 10V 18A GS D 120 160 ...

Page 5

... I = 250 A D 1.1 1.0 0.9 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE V = 30V DD WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT V = 10V 30V 18A d(OFF GATE TO SOURCE RESISTANCE ( ) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE HUFA76409D3, HUFA76409D3ST Rev. A1 120 160 200 17A = 12A = d(ON ...

Page 6

... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM HUFA76409D3, HUFA76409D3ST Rev 10V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUFA76409D3, HUFA76409D3ST Rev. A1 DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUFA76409D3, HUFA76409D3ST Rev. A1 LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUFA76409D3, HUFA76409D3ST Rev. A1 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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