FQD17P06TM Fairchild Semiconductor, FQD17P06TM Datasheet - Page 3

• Manufacturer Part Number: FQD17P06TM
• Description: MOSFET P-CH 60V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD17P06TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 135 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Forward Transconductance Gfs (max / Min): 8.7 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQD17P06TM

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
2000
1800
1600
1400
1200
1000
0.40
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
10
10
1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : - 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
V
10
GS
-V
V
DS
DS
20
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
, Drain Current [A]
C
C
10
C
0
iss
rss
oss
0
V
GS
= - 20V
30
V
GS
= - 10V
40
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
※ Note : T
gs
gd
ds
1
C
+ C
+ C
= 25℃
※ Notes :
10
gd
gd
1. V
2. f = 1 MHz
1
50
(C
J
ds
GS
= 25℃
= shorted)
= 0 V
60
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
0.2
Figure 2. Transfer Characteristics
150℃
Variation vs. Source Current
150℃
0.4
4
0.6
4
-V
-V
Q
SD
and Temperature
GS
-55℃
25℃
G
0.8
8
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
1.0
DS
V
DS
= -48V
= -30V
1.2
12
6
1.4
1.6
16
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.8
※ Note : I
8
DS
GS
= -30V
= 0V
2.0
20
D
= -17 A
2.2
Rev. A3. Januaary 2009
2.4
10
24