HUF76609D3ST Fairchild Semiconductor, HUF76609D3ST Datasheet
HUF76609D3ST
Specifications of HUF76609D3ST
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HUF76609D3ST Summary of contents
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... Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs R Ordering Information PART NUMBER HUF76609D3 HUF76609D3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76609D3ST Unless Otherwise Specified = 0.160 10V 0.165 ...
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... Gate to Drain “Miller” Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ©2001 Fairchild Semiconductor Corporation o C, Unless Otherwise Specified SYMBOL TEST CONDITIONS 250 (Figure 12) DSS ...
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... SINGLE PULSE 0. FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 200 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION ©2001 Fairchild Semiconductor Corporation 150 175 125 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V ...
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... D 140 120 100 GATE TO SOURCE VOLTAGE (V) GS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT ©2001 Fairchild Semiconductor Corporation (Continued) 100 s 1ms 10ms o C 100 300 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING o C 3.0 3 ...
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... DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4.5V 50V d(OFF GATE TO SOURCE RESISTANCE ( ) GS FIGURE 15. SWITCHING TIME vs GATE RESISTANCE ©2001 Fairchild Semiconductor Corporation (Continued 250 120 160 200 o C) FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN ISS OSS RSS ...
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... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT g(REF) FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT) ...
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... S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.3) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. ©2001 Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 ...
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... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...