FDD8451 Fairchild Semiconductor, FDD8451 Datasheet - Page 2

• Manufacturer Part Number: FDD8451
• Description: MOSFET N-CH 40V 9A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDD8451

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 990pF @ 20V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.024Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 28A
• Power Dissipation: 30W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 28 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8451TR

FDD8451 Rev. B2
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3: Starting T
BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
BV
GS(th)
SD
iss
oss
rss
g
g
g
gs
gd
rr
the drain pins. R
V
Symbol
DSS
T
T
GS(th)
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
J
= 25
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transcondductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge
°
JC
C, L = 0.1 mH, I
is guaranteed by design while R
AS
Parameter
= 20 A, V
DD
a)
= 36 V, V
T
40 °C/W when mounted on a
1 in
J
JA
= 25°C unless otherwise noted
2
is determined by the user’s board design.
pad of 2 oz copper
GS
= 10 V.
I
I
25°C
V
V
D
D
V
I
25°C
V
V
V
T
V
V
f = 1MHz
f = 1MHz
V
V
V
V
I
I
DS
GS
D
F
F
J
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 A, V
= 250 A, referenced to
= 9A, di/dt = 100A/ s
= 9A, di/dt = 100A/ s
= 250 A, referenced to
= 150°C
= 32V, V
= ±20V, V
= 20V, I
= 5V, I
= 20V, V
= 0V, I
= V
= 10V, I
= 4.5V, I
= 10V, I
= 20V, I
= 10V, R
= 10V
2
Test Conditions
DS
, I
D
S
D
D
D
D
GS
D
= 9A
GS
D
= 9A
GS
GEN
= 9A
DS
= 9A
= 9A
= A
= 250 A
= 7A
= 0V
= 0V
= 0V,
= 0V
= 6
b)
Min
40
1
96 °C/W when mounted on
a minimum pad
33.5
Typ
0.87
-5.7
780
112
8.6
2.5
3.7
2.1
1.1
19
16
19
23
32
29
72
25
19
7
3
2
www.fairchildsemi.com
±100
Max
990
150
110
1.2
14
10
34
10
20
24
30
41
11
38
29
1
3
mV/°C
Units
mV/°C
m
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nC
ns
V
V
V
S
A