NDS9407 Fairchild Semiconductor, NDS9407 Datasheet
NDS9407
Manufacturer Part Number
NDS9407
Description
MOSFET P-CH 60V 3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.NDS9407.pdf
(5 pages)
Specifications of NDS9407
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
732pF @ 30V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
78 m Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 3 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS9407TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDS9407
Manufacturer:
FSC
Quantity:
90 000
Company:
Part Number:
NDS9407
Manufacturer:
FSC
Quantity:
2 746
Part Number:
NDS9407
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NDS9407-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
NDS9407
60V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
NDS9407
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
advanced
D
– Continuous
– Pulsed
D
NDS9407
D
Device
Parameter
S
S
S
PowerTrench
S
S
S
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
–3.0 A, –60 V.
Low gate charge
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
–55 to +175
12mm
R
R
Ratings
DS(ON)
DS(ON)
–3.0
–60
–12
125
2.5
1.2
1.0
50
25
20
= 150 m
= 240 m
4
3
2
1
@ V
@ V
May 2002
2500 units
GS
GS
NDS9407 Rev B1(W)
Quantity
= –10 V
= –4.5 V
Units
C/W
W
V
V
A
C
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NDS9407 Summary of contents
Page 1
... Reel Size 13’’ May 2002 R = 150 –10 V DS(ON 240 –4.5 V DS(ON Ratings Units – –3.0 A –12 2.5 W 1.2 1.0 –55 to +175 C 50 C/W 125 25 Tape width Quantity 12mm 2500 units NDS9407 Rev B1(W) ...
Page 2
... Min Typ Max Units –60 V –45 mV/ C –1 A –10 100 nA –100 nA –1 –1.6 – mV 150 m 99 240 122 250 – 732 2.2 nC 3.3 nC –2.1 A –0.8 –1 125°C/W when mounted on a minimum pad. NDS9407 Rev B1(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -3.5V -4.0V -4.5V -6.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD NDS9407 Rev B1( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 NDS9407 Rev B1(W) 60 1000 1000 ...
Page 5
CROSSVOLT â â â â Rev. H5 ...