FDD5612 Fairchild Semiconductor, FDD5612 Datasheet
FDD5612
Manufacturer Part Number
FDD5612
Description
MOSFET N-CH 60V 5.4A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD5612.pdf
(5 pages)
Specifications of FDD5612
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 30V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.036 Ohms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
42 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD5612
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDD5612
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDD5612
60V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
DS(ON)
D
J
DSS
GSS
D
, T
JC
JA
Device Marking
STG
N-Channel
specifications. The result is a MOSFET that is
FDD5612
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
S
MOSFET
TO-252
– Continuous
– Pulsed
has
FDD5612
Device
Parameter
been
D
designed
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1)
(Note 1)
(Note 1b)
Features
18 A, 60 V.
Optimized for use in high frequency DC/DC
Low gade charge.
Very fast switching.
converters.
Tape width
R
R
G
DS(ON)
DS(ON)
–55 to +175
16mm
Ratings
100
5.4
3.8
1.6
3.5
60
18
42
40
96
20
= 55 m
= 64 m
D
S
@ V
@ V
March 2001
GS
GS
FDD5612 REV. C1(W)
= 10 V
= 6 V
2500 units
Quantity
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
FDD5612 Summary of contents
Page 1
... C unless otherwise noted A (Note 1) (Note 1a) (Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a) (Note 1b) Reel Size 13’’ March 2001 DS(ON DS(ON Ratings Units 5.4 100 42 W 3.8 1.6 –55 to +175 C 3.5 C/W 40 C/W 96 Tape width Quantity 16mm 2500 units FDD5612 REV. C1(W) ...
Page 2
... 125 5 1.0 MHz GEN 5 2.7 A (Note has been used to determine some of the maximum ratings C/W when mounted on a 0.076 in pad of 2oz copper. Min Typ Max Units 100 nA –100 –6 mV 103 660 7 2 2.7 A 0.8 1 FDD5612 Rev C1(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD5612 Rev C1( 1.2 ...
Page 4
... Figure 8. Capacitance Characteristics. 80 100µ 10ms 100ms 100 0.01 Figure 10. Single Pulse Maximum 0.01 0 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( °C/W JA P(pk ( Duty Cycle 100 FDD5612 Rev C1(W) 60 1000 2 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...