FQD4N50TM Fairchild Semiconductor, FQD4N50TM Datasheet - Page 3
![MOSFET N-CH 500V 2.6A DPAK](/photos/5/38/53880/261-dpak_sml.jpg)
FQD4N50TM
Manufacturer Part Number
FQD4N50TM
Description
MOSFET N-CH 500V 2.6A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQD4N50TM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
460pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2.6 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.6 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Internati
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Rev. A2, January 2009