FQD12N20TM Fairchild Semiconductor, FQD12N20TM Datasheet - Page 7

• Manufacturer Part Number: FQD12N20TM
• Description: MOSFET N-CH 200V 9A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD12N20TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 910pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.28 Ohms
• Forward Transconductance Gfs (max / Min): 7.3 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 55 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 120 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

   
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
©2009 Fairchild Semiconductor Corporation
Rev. A1. January 2009