FQD12N20LTM Fairchild Semiconductor, FQD12N20LTM Datasheet - Page 5

• Manufacturer Part Number: FQD12N20LTM
• Description: MOSFET N-CH 200V 9A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD12N20LTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 5V
• Input Capacitance (ciss) @ Vds: 1080pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11.6 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQD12N20LTM; FQD12N20LTMTR

©2009 Fairchild Semiconductor Corporation
10V
10V
12V
12V
5V
5V
t
t
p
p
3mA
3mA
200nF
200nF
R
R
R
R
G
G
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
V
V
300nF
300nF
I
I
I
DS
DS
DS
DS
D
D
D
Resistive Switching Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
DUT
DUT
Same Type
Same Type
R
R
as DUT
as DUT
L
L L
L
L
V
V
DD
DD
V
V
DD
DD
V
V
DS
DS
BV
BV
V
V
V
V
5V
5V
V
V
V
V
DSS
DSS
I
I
DD
DD
AS
AS
GS
GS
DS
DS
GS
GS
E
E
E
10%
10%
AS
AS
AS
90%
90%
Q
Q
=
=
=
t
t
d(on)
d(on)
gs
gs
----
----
----
----
1
1
1
1
2
2
2
2
t
t
on
on
L I
L I
L I
t
t
r
r
I
I
AS
AS
AS
D
D
(t)
(t)
t
t
2
2
2
Q
Q
p
p
Q
Q
g
g
--------------------
--------------------
gd
gd
Charge
Charge
BV
BV
BV
BV
DSS
DSS
DSS
DSS
- V
- V
t
t
d(off)
d(off)
DD
DD
t
t
off
off
Time
Time
t
t
f
f
Rev. A2, January 2009
V
V
DS
DS
(t)
(t)