FQPF5N50C Fairchild Semiconductor, FQPF5N50C Datasheet - Page 5

• Manufacturer Part Number: FQPF5N50C
• Description: MOSFET N-CH 500V 5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF5N50C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5.2 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
1 0
1 0
1 0
1 0
Figure 11-2. Transient Thermal Response Curve for FQPF5N50C
1 0
1 0
- 1
- 2
Figure 11. Transient Thermal Response Curve for FQP5N50C
- 1
- 2
1 0
1 0
0
0
- 5
- 5
D = 0 .5
0 . 0 2
0 . 0 1
0 . 0 5
0 . 2
0 . 1
D = 0 .5
0 . 2
0 . 0 5
0 . 0 2
0 . 0 1
0 . 1
(Continued)
1 0
1 0
s in g le p u ls e
- 4
- 4
s in g le p u ls e
t
t
1
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
- 3
- 3
1 0
1 0
- 2
- 2
1 0
1 0
※ N o te s :
- 1
- 1
P
1 . Z
2 . D u ty F a c to r, D = t
3 . T
※ N o te s :
P
DM
1 . Z
2 . D u ty F a c to r, D = t
3 . T
DM
θ J C
J M
θ J C
J M
- T
(t) = 1 .7 1 ℃ /W M a x .
- T
C
(t) = 3 .3 1 ℃ /W M a x .
= P
t
C
1
t
= P
1
t
2
1 0
1 0
D M
t
2
D M
* Z
0
0
* Z
1
θ J C
/t
2
1
θ J C
/t
(t)
2
(t)
1 0
1 0
1
1
Rev. A, April 2003