FDD120AN15A0 Fairchild Semiconductor, FDD120AN15A0 Datasheet - Page 2

• Manufacturer Part Number: FDD120AN15A0
• Description: MOSFET N-CH 150V 14A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD120AN15A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse width = 100s.
B
I
I
V
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
DS(ON)
ON
d(ON)
r
d(OFF)
f
OFF
rr
GS(TH)
VDSS
ISS
OSS
RSS
SD
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
FDD120AN15A0
Device Marking
FDP120AN15A0
J
= 25°C, L = 27mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
= 3A.
FDD120AN15A0
FDP120AN15A0
Parameter
Device
(V
GS
= 10V)
T
C
= 25°C unless otherwise noted
TO-252AA
TO-220AB
Package
I
V
V
V
V
I
I
I
T
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
GS
GS
J
GS
GS
DS
GS
DS
DD
GS
= 250 A, V
= 4A, V
= 2A, V
= 4A, V
= 175
= 4A
= 2A
= 4A, dI
= 4A, dI
= 0V
= 20V
= 0V to 10V
= 0V to 2V
= 120V
= V
= 25V, V
= 75V, I
= 10V, R
Test Conditions
DS
o
C
GS
GS
GS
, I
SD
SD
D
D
= 10V
= 6V
= 10V,
GS
GS
GS
/dt = 100A/ s
/dt = 100A/ s
= 4A
= 250 A
Reel Size
= 0V,
= 0V
= 24
330mm
T
V
I
I
D
g
Tube
C
DD
= 1.0mA
= 4A
= 150
= 75V
o
C
Tape Width
150
Min
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16mm
N/A
0.101
0.113
0.235
11.2
FDP120AN15A0 / FDD120AN15A0 Rev. B
770
Typ
1.4
3.5
2.1
2.6
85
17
16
30
19
6
-
-
-
-
-
-
-
-
-
-
-
0.120
0.170
0.282
14.5
1.25
Max
250
109
100
1.8
1.0
33
74
61
2500 units
Quantity
1
4
-
-
-
-
-
-
-
-
-
-
-
50 units
Units
nC
nC
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A