FDS6694 Fairchild Semiconductor, FDS6694 Datasheet

MOSFET N-CH 30V 12A 8-SOIC

FDS6694

Manufacturer Part Number
FDS6694
Description
MOSFET N-CH 30V 12A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6694

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 5V
Input Capacitance (ciss) @ Vds
1293pF @ 15V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0091 Ohms
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FDS6694
30V N-Channel Fast Switching PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
DC/DC converter
Power management
Load switch
J
DSS
GSS
D
, T
JA
JA
JC
Device Marking
STG
N-Channel
FDS6694
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
MOSFET
D
D
DS(ON)
Pin 1
D
D
and fast switching speed.
SO-8
D
D
– Continuous
– Pulsed
has
D
FDS6694
D
Device
Parameter
S
been
S
S
S
S
S
designed
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
12 A, 30 V.
Low gate charge (13 nC typical)
High performance trench technology for extremely
High power and current handling capability.
low R
DS(ON)
5
6
7
8
Tape width
R
R
DS(ON)
DS(ON)
–55 to +175
12mm
Ratings
125
2.5
1.4
1.2
30
12
50
50
25
20
= 11 m
= 13.5 m @ V
@ V
January 2004
4
3
2
1
GS
GS
= 10 V
2500 units
FDS6694 Rev.E(W)
Quantity
= 4.5 V
Units
C/W
C/W
C/W
W
V
V
A
C

Related parts for FDS6694

FDS6694 Summary of contents

Page 1

... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1c) (Note 1) Reel Size 13’’ January 2004 DS(ON 13 4.5 V DS(ON Ratings Units 2.5 W 1.4 1.2 –55 to +175 C 50 C/W 125 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS6694 Rev.E(W) ...

Page 2

... A/µ determined by the user's board design 105°C/W when 2 2 mounted on a .04 in pad copper Min Typ Max Units mV 100 –5 mV 11.1 13.5 12 1293 pF 342 pF 136 pF 0. 4.7 nC 2.1 A 0.74 1 125°C/W when mounted on a minimum pad. FDS6694 Rev.E(W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.5V GS 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6694 Rev.E( 1.2 ...

Page 4

... Figure 8. Capacitance Characteristics. 50 100µs 40 1ms 10ms 100 0.01 Figure 10. Single Pulse Maximum 0.01 0 TIM 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° TIME (sec) 1 Power Dissipation. R ( 125 °C/W JA P(pk ( Duty Cycle FDS6694 Rev.E(W) 30 100 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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